China Piezoelectric Wafer manufacturer
Hangzhou Freqcontrol Electronic Technology Ltd.
Hangzhou Freqcontrol Electronic Technology Ltd. We Grow Crystal. We Fabricate Wafer. We are Piezoelectric Specialist.
4
Home > Products > Piezoelectric Wafer >

4 Inch LNOI Wafer Achieving Compact Photonic Integration

Browse Categories

Hangzhou Freqcontrol Electronic Technology Ltd.

City: hangzhou

Province/State:shanghai

Country/Region:china

Tel:86-571-85803723

Contact Person:
Mr.Xu
View Contact Details

4 Inch LNOI Wafer Achieving Compact Photonic Integration

Brand Name BonTek
Model Number LNOI Wafer
Certification ISO:9001, ISO:14001
Place of Origin China
Minimum Order Quantity 25 pcs
Price $2000/pc
Payment Terms T/T
Supply Ability 50000 pcs/Month
Delivery Time 1-4 weeks
Packaging Details Cassette/ Jar package, vaccum sealed
Product LiNbO3 On Insulator
Diameter 4 inch, Φ100mm
Top Layer Lithium Niobate
Top Thickness 300~600nm
Insolation SiO2 Thermal Oxide
Insolation Thickness 2000±15nm; 3000±50nm; 4700±100nm
Substrate Silicon
Application Optical Waveguides and Microwaveguides
Detailed Product Description

Achieving Compact Photonic Integration With 4-Inch LNOI Wafers

 

LNOI stands for Lithium Niobate on Insulator, which is a specialized substrate technology used in the field of integrated photonics. LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of compact and high-performance photonic devices.

 

The fabrication of LNOI substrates involves bonding a thin layer of LiNbO3 onto an insulating layer using techniques like wafer bonding or ion-cutting. This results in a structure where LiNbO3 is suspended on a non-conductive substrate, providing electrical isolation and reducing the optical waveguide losses.

 

Applications of LNOI:

  • Integrated Photonics
  • Optical Communication
  • Sensing and Metrology
  • Quantum Optics

 

LNOI Wafer
StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
Thickness500 ± 20 μmBowWithin 50 μm
Primary Flat Length47.5 ± 2 mm
57.5 ± 2 mm
Edge Trimming2 ± 0.5 mm
Wafer BevelingR TypeEnvironmentalRohs 2.0
Top LN Layer
Average Thickness400/600±10 nmUniformity< 40nm @17 Points
Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
GradeOpticalSurface Ra< 0.5 nm
Defects>1mm None;
1 mm Within 300 total
DelaminationNone
Scratch>1cm None;
1cm Within 3
Primary FlatPerpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
Substrate
MaterialSiOrientation<100> ± 1°
Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
Backside ContaminationNo visible stainBacksideEtch

 

 

 


 

 

 

Product Tags: LNOI Piezoelectric Wafer   4 Inch LNOI Wafer   300nm LiNbO3 On Insulator  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: Hangzhou Freqcontrol Electronic Technology Ltd.
Subject:
Message:
Characters Remaining: (80/3000)