C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

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Hangzhou Freqcontrol Electronic Technology Ltd.

City: hangzhou

Province/State:shanghai

Country/Region:china

Tel:86-571-85803723

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C Plane High Smoothness And Cleanliness Sapphire Substrate For Semiconductor

Brand Name	BonTek
Model Number	Sapphire (Al2O3)
Certification	ISO:9001
Place of Origin	China
Minimum Order Quantity	5 Pieces
Price	Negotiable
Payment Terms	T/T
Supply Ability	10000 pieces/Month
Delivery Time	1-4 weeks
Packaging Details	Cassette, Jar, Film package
Material	Sapphire (Al2O3)
Type	Single Crystal Al2O3
Color	White
Purity	99.999％
Surface	Double side polish, Single side polish
Feature	High strength, high hardness, high wear resistance
Application	Semicondutor Wafer, Led Chip, Optical Glass Window, Electronic Ceramics
Industry	Led，optical Glass，eli-ready Wafer

Detailed Product Description

C Plane High Smoothness And High Cleanliness Sapphire Substrate For Semiconductor

Sapphire wafers are mainly suitable for the research and development of new semiconductor devices, offering high specifications such as high smoothness and high cleanliness in addition to the traditional sapphire substrate standard grades.

Main Features

• High strength, high hardness, high wear resistance (hardness second only to diamond)

• High transmittance (light transmittance in the ultraviolet to infrared range)

• High corrosion resistance (high tolerance to acid, alkali, plasma)

• High insulation (insulator, not easy to conduct electricity)

• High heat resistance (melting point 2050℃) Heat conductivity (40 times of glass)

Specification

• Standard size (φ2 ",3 ",4 ",6 ",8 ",12 "), other special size, corner shape and other shapes can be corresponding.

• Can correspond to a variety of plane orientation: c-plane, r-plane, m-plane, a-plane

• Double-sided grinding, single-sided grinding

• Customizable punching

Crystal Materials	99,996% of Al2O3,High Purity, Monocrystalline, Al2O3
Crystal quality	Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Diameter	2inch	3inch	4inch	5inch ～ 7inch
	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	In accordance with the provisions of standard production
	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	In accordance with the provisions of standard production
Thickness	430±15µm	550±15µm	650±20µm	Can be customized by customer
Orientation	C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle
Primary flat length	16.0±1mm	22.0±1.0mm	32.5±1.5 mm	In accordance with the provisions of standard production
Primary flat Orientation	A-plane (1 1-2 0 ) ± 0.2°
TTV	≤10µm	≤15µm	≤20µm	≤30µm
LTV	≤10µm	≤15µm	≤20µm	≤30µm
TIR	≤10µm	≤15µm	≤20µm	≤30µm
BOW	≤10µm	≤15µm	≤20µm	≤30µm
Warp	≤10µm	≤15µm	≤20µm	≤30µm
Front Surface	Epi-Polished (Ra< 0.2nm)
Back Surface	Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)
Note	Can provide high-quality sapphire substrate wafer according to customers' specific requirement

PHYSICAL PROPERTIES

Density	3.97 g/cm³
Melting Point	2040 degrees C
Thermal Conductivity	27.21 W/(m x K) at 300 K
Thermal Expansion	5.6 x 10 ^-6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 ^-6 /K
Hardness	Knoop 2000 kg/mm ² with 2000g indenter
Specific Heat Capacity	419 J/(kg x K)
Dielectric Constant	11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz
Young's Modulus (E)	335 GPa
Shear Modulus (G)	148.1 GPa
Bulk Modulus (K)	240 GPa
Elastic Coefficients	C₁₁=496 C₁₂=164 C₁₃=115 C₃₃=498 C₄₄=148
Apparent Elastic Limit	275 MPa (40,000 psi)
Poisson Ratio	0.25

Acceptance Check

Product Tags: Semiconductor Sapphire Substrate C Plane Sapphire Substrate High Cleanliness Sapphire Wafer

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