2 Inch C Plane Polished Sapphire Wafers Crystal Substrates

2 Inch Sapphire Crystal C Plane Polished Sapphire Wafers Sapphire Substrates

Specification:
Single crystal Al2O3 99.999％
Orientation: R-axis 0.5°

Diameter:50.8±0.1mm

Thickness :430±15um or 330±15um

Primary flat:16±1mm

OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)

Frontside Surface Roughness:Ra＜0.2nm

Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra＜0.2nm)

TTV:＜10um BOW:-10~0um WARP:＜10um

Laser Mark Series No. by needs

Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment

Cleanliness :Free visible contamination

1. Sapphire has a high optical transmittance, so it is widely used as microelectronic tube dielectric material, ultrasonic conduction element, waveguide laser cavity, and other optical elements, as window materials for infrared military devices, space vehicles, high-intensity lasers and optical communications.

2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so sapphire substrate is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing, and other precision manufacturing (wear resistance), coal, gas, well detection sensors and detector windows (anti-corrosion).

3. Sapphire has the characteristics of electrical insulation, transparency, good thermal conductivity, and high rigidity, so it can be used as the substrate material of integrated circuits, such as LED and microelectronic circuits, ultra-high-speed integrated circuit.

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