4inch 0.5mm Sapphire Crystal Wafer Single Crystal C-Axis Epi-Ready

Horizontally Directed Crystallization Grown Sapphire Wafer 4inch 0.5mm C-Axis Epi-Ready

Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire Al2O3 optics is chemically resistant to many acids and alkalis at temperatures up to 1000 degrees C as well as to HF below 300 degrees C. These properties encourage its wide use of Sapphire Al2O3 optics in hostile environments where optical transmission in the range from the visible to the near infrared is required.

Now the majority of crystals are growing from liquid melt. The most suitable substances to grow crystal from a melt have to melt without decomposition, have no polymorphic transitions and are characterized by low chemical activity. The crystallization process from a melt is applied in the most widespread methods of monocrystalline sapphire growth: namely, the Horizontally Directed Crystallization (HDC) method and Stepanov's method.

OPTICAL PROPERTIES

PHYSICAL PROPERTIES

Acceptance Check

1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.

2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.

3. Please open the vacuum package in a clean room when the products are to be applied.

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