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BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

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Country/Region:china

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BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

Brand Name Infineon
Model Number BSC010NE2LSI
Certification ROHS
Place of Origin Malaysia
Minimum Order Quantity 1pieces
Price Negotiated
Payment Terms T/T, Western Union
Supply Ability 5000PCS
Delivery Time 5 working days
Packaging Details REEL
Application Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control
Details BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET
Products Name Integrated circuits(IC)
Category Electronic Components
IC Family Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Other Name BSC010
Package TDSON8
Lead free status RoHS Compliant, PB Free, Lead Free
Detailed Product Description

BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control

 

Applications:

Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs

and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages,

make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

 

Benefits :

 

Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase efficiency for all load conditions
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in.

 

 

 

Specifications:

Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC070
ParametricsBSC070N10NS3G
Ciss3000 pF
Coss520 pF
ID (@25°C) max90 A
IDpuls max360 A
Operating Temperature min max-55 °C 150 °C
Ptot max114 W
PackageSuperSO8 5x6
PolarityN
QG (typ @10V)42 nC
RDS (on) (@10V) max7 mΩ
Rth1.1 K/W
VDS max100 V
VGS(th) min max2.7 V 2 V 3.5 V

Product Tags: OptiMOS 25V N Channel Power MOSFET   BSC010NE2LSI N Channel Power MOSFET   BSC010NE2LSI OptiMOS 25V  
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