BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

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Country/Region:china

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BSC010NE2LSI OptiMOS 25V N Channel Power MOSFET For Onboard Charger Mainboard

Brand Name	Infineon
Model Number	BSC010NE2LSI
Certification	ROHS
Place of Origin	Malaysia
Minimum Order Quantity	1pieces
Price	Negotiated
Payment Terms	T/T, Western Union
Supply Ability	5000PCS
Delivery Time	5 working days
Packaging Details	REEL
Application	Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control
Details	BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET
Products Name	Integrated circuits(IC)
Category	Electronic Components
IC Family	Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single
Other Name	BSC010
Package	TDSON8
Lead free status	RoHS Compliant, PB Free, Lead Free

Detailed Product Description

BSC010NE2LSI OptiMOS 25V N-Channel Power MOSFET for Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control

Applications:

Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs

and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages,

make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Benefits :

Save overall system costs by reducing the number of phases in multiphase converters
Reduce power losses and increase efficiency for all load conditions
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in.

Specifications:

Category	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN
Base Product Number	BSC070

Parametrics	BSC070N10NS3G
Ciss	3000 pF
Coss	520 pF
ID (@25°C) max	90 A
IDpuls max	360 A
Operating Temperature min max	-55 °C 150 °C
Ptot max	114 W
Package	SuperSO8 5x6
Polarity	N
QG (typ @10V)	42 nC
RDS (on) (@10V) max	7 mΩ
Rth	1.1 K/W
VDS max	100 V
VGS(th) min max	2.7 V 2 V 3.5 V

Product Tags: OptiMOS 25V N Channel Power MOSFET BSC010NE2LSI N Channel Power MOSFET BSC010NE2LSI OptiMOS 25V

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