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FDMC4435BZ Field Programmable Gate Array 30V P Channel Power Trench

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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FDMC4435BZ Field Programmable Gate Array 30V P Channel Power Trench
Brand Name ON
Model Number FDMC4435BZ
Place of Origin ON
Minimum Order Quantity 3000
Price Can discuss
Payment Terms T/T
Supply Ability 10000
Delivery Time 5-8 working days
Packaging Details Carton packaging
Manufacturer onsemi
Product Category MOSFET
Technology Si
Mounting Style SMD/SMT
Package / Case Power-33-8
Transistor Polarity P-Channel
Number of Channels 1 Channel
Detailed Product Description

FDMC4435BZ Field Programmable Gate Array 30V P Channel Power Trench

 

FDMC4435BZ MOSFET -30V P-Channel PowerTrench

 

onsemi
MOSFET
RoHS:Details
Si
SMD/SMT
Power-33-8
P-Channel
1 Channel
30 V
8.5 A
20 mOhms
- 25 V, + 25 V
3 V
53 nC
- 55 C
+ 150 C
2.3 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand:onsemi / Fairchild
Configuration:Single
Fall Time:20 ns
Height:0.8 mm
Length:3.3 mm
Product Type:MOSFET
Rise Time:6 ns
Series:FDMC4435BZ
Factory Pack Quantity3000
Subcategory:MOSFETs
Transistor Type:1 P-Channel
Typical Turn-Off Delay Time:34 ns
Typical Turn-On Delay Time:10 ns
Width:3.3 mm
Unit Weight:0.007055 oz
Product Tags: FDMC4435BZ Field Programmable Gate Array   30V Field Programmable Gate Array   FDMC4435BZ  
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