BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

Tel:86

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Brand Name	INFINEON
Model Number	BSC011N03LSI
Place of Origin	INFINEON
Minimum Order Quantity	1
Price	Can discuss
Payment Terms	T/T
Supply Ability	3000
Packaging Details	The cartons
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	230 A
Rds On - Drain-Source Resistance	1.1 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V

Detailed Product Description

BSC011N03LSI IGBT Power Module With High Current Low Internal Resistance

BSC011N03LSI Mosfet TDSON-8 With High Current And Low Internal Resistance

Product Attribute	Attribute Value	Search Similar
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	230 A
Rds On - Drain-Source Resistance:	1.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	6.2 ns
Forward Transconductance - Min:	80 S
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
Rise Time:	9.2 ns
	5000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	6.4 ns
Width:	5.15 mm
Part # Aliases:	BSC11N3LSIXT SP000884574 BSC011N03LSIATMA1
Unit Weight:	0.003683 oz

Product Tags: BSC011N03LSI IGBT Power Module Mosfet IGBT Power Module BSC011N03LSI

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