MBT3906DW1T1G Bipolar Transistors - BJT SS GP XSTR PNP 40V

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	onsemi
Model Number	MBT3906DW1T1G
Minimum Order Quantity	3000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	PNP
Configuration	Dual
Collector- Emitter Voltage VCEO Max	40 V
Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	5 V

Detailed Product Description

Bipolar Transistors - BJT SS GP XSTR PNP 40V

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:	Details
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	PNP
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	400 mV
Maximum DC Collector Current:	200 mA
Pd - Power Dissipation:	150 mW
Gain Bandwidth Product fT:	250 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MBT3906DW1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Continuous Collector Current:	- 200 mAdc
DC Collector/Base Gain hfe Min:	60
Height:	1 mm
Length:	2.2 mm
Product Type:	BJTs - Bipolar Transistors
	3000

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