NVMFD5C680NLT1G MOSFET T6 60V LL S08FL DS

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	onsemi
Model Number	NVMFD5C680NLT1G
Minimum Order Quantity	1500
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	26 A
Rds On - Drain-Source Resistance	23 mOhms, 23 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V

Detailed Product Description

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SO-8FL-Dual-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	23 mOhms, 23 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	19 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Series:	NVMFD5C680NL
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Dual
Fall Time:	23 ns, 23 ns
Forward Transconductance - Min:	50 S, 50 S
Product Type:	MOSFET
Rise Time:	25 ns, 25 ns
	1500

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