DMN10H220L-7 MOSFET 100V N Ch Enh FET 16Vgs 1.6A 1.3W

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	Diodes Incorporated
Model Number	DMN10H220L-7
Minimum Order Quantity	3000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	1.6 A
Rds On - Drain-Source Resistance	220 mOhms
Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	1 V

Detailed Product Description

MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	1.6 A
Rds On - Drain-Source Resistance:	220 mOhms
Vgs - Gate-Source Voltage:	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	8.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.3 W
Channel Mode:	Enhancement
Series:	DMN10
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Fall Time:	3.6 ns
Product Type:	MOSFET
Rise Time:	8.2 ns
	3000

Product Tags: DMN10H220L-7 MOSFET 100V MOSFET 100V 1.6A MOSFET 100V N Ch

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