IRF7907TRPBF MOSFET MOSFT DUAL NCh 30V 9.1A

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	Infineon
Model Number	IRF7907TRPBF
Minimum Order Quantity	4000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	9.1 A, 11 A
Rds On - Drain-Source Resistance	17.1 mOhms, 11.5 mOhms

Detailed Product Description

MOSFET MOSFT DUAL NCh 30V 9.1A

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	9.1 A, 11 A
Rds On - Drain-Source Resistance:	17.1 mOhms, 11.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	6.7 nC, 14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	3.4 ns, 5.3 ns
Forward Transconductance - Min:	19 S, 24 S
Height:	1.75 mm
Length:	4.9 mm
Product Type:	MOSFET
Rise Time:	9.3 ns, 14 ns
	4000

Product Tags: IRF7907TRPBF MOSFET MOSFET MOSFT DUAL NCh MOSFET 30V 9.1A

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