IPC100N04S51R9ATMA1 MOSFET N-CHANNEL 30/40V

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	Infineon
Model Number	IPC100N04S51R9ATMA1
Minimum Order Quantity	5000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1.9 mOhms

Detailed Product Description

MOSFET N-CHANNEL 30/40V

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	65 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7 ns
Product Type:	MOSFET
Rise Time:	4 ns
	5000

Product Tags: IPC100N04S51R9ATMA1 MOSFET N CHANNEL MOSFET N CHANNEL 30V MOSFET N CHANNEL 40V

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