IKW50N60TFKSA1 IGBT Transistors LOW LOSS DuoPack 600V 50A

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

Tel:86

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Brand Name	Infineon
Model Number	IKW50N60TFKSA1
Minimum Order Quantity	240
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Mounting Style	Through Hole
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V

Detailed Product Description

IGBT Transistors LOW LOSS DuoPack 600V 50A

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Transistors
RoHS:	Details
Technology:	Si
Package / Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	333 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT3
Packaging:	Tube
Brand:	Infineon Technologies
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
	240

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