BSS123NH6327XTSA1 MOSFET N-Ch 100V 190mA SOT-23-3

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name	Infineon
Model Number	BSS123NH6327XTSA1
Minimum Order Quantity	3000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	190 mA
Rds On - Drain-Source Resistance	6 Ohms

Detailed Product Description

MOSFET N-Ch 100V 190mA SOT-23-3

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	190 mA
Rds On - Drain-Source Resistance:	6 Ohms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	600 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Series:	BSS123
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	22 ns
Forward Transconductance - Min:	410 mS
Height:	1.1 mm
Length:	2.9 mm
Product Type:	MOSFET
Rise Time:	3.2 ns
	3000

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