SI1902CDL-T1-GE3 MOSFET 20V Vds 12V Vgs SC70-6

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Brand Name	Vishay
Model Number	SI1902CDL-T1-GE3
Minimum Order Quantity	3000
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.1 A
Rds On - Drain-Source Resistance	235 mOhms

Detailed Product Description

MOSFET 20V Vds 12V Vgs SC70-6

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.1 A
Rds On - Drain-Source Resistance:	235 mOhms
Vgs - Gate-Source Voltage:	- 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	420 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SI1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	10 ns
Height:	0.75 mm
Length:	2.05 mm
Product Type:	MOSFET
Rise Time:	13 ns
	3000

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