NVMFS5C612NLT1G MOSFET NFET SO8FL 60V 235A 1.5MO

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

Tel:86

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Brand Name	onsemi
Model Number	NVMFS5C612NLT1G
Minimum Order Quantity	1500
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	235 A
Rds On - Drain-Source Resistance	1.2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V

Detailed Product Description

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	235 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	91 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	18 ns
Forward Transconductance - Min:	151 S
Product Type:	MOSFET
Rise Time:	51 ns
	1500

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