IPD70N10S3L-12 MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Country/Region:china

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Brand Name	Infineon
Model Number	IPD70N10S3L-12
Minimum Order Quantity	2500
Price	Negotiabie
Payment Terms	T/T
Packaging Details	Carton packging
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance	11.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.7 V

Detailed Product Description

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	11.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.7 V
Qg - Gate Charge:	59 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	OptiMOS
Series:	OptiMOS-T
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7 ns
Height:	2.3 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	6 ns
	2500

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