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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
Brand Name ON
Model Number MMBT5551LT1G
Place of Origin ON
Minimum Order Quantity 3000
Price Can discuss
Payment Terms T/T
Supply Ability 10000
Delivery Time 5-8 working days
Packaging Details Carton packaging
Manufacturer onsemi
Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 160 V
Collector- Base Voltage VCBO 180 V
Detailed Product Description

MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

 

MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN

 

onsemi
Bipolar Transistors - BJT
RoHS:Details
SMD/SMT
SOT-23-3
NPN
Single
160 V
180 V
6 V
200 mV
600 mA
225 mW
-
- 55 C
+ 150 C
MMBT5551L
Reel
Cut Tape
MouseReel
Brand:onsemi
Continuous Collector Current:0.6 A
DC Collector/Base Gain hfe Min:80
DC Current Gain hFE Max:250
Height:0.94 mm
Length:2.9 mm
Product Type:BJTs - Bipolar Transistors
Factory Pack Quantity3000
Subcategory:Transistors
Technology:Si
Width:1.3 mm
Unit Weight:0.000282 oz
Product Tags: MMBT5551LT1G IGBT Power Module   600mA IGBT Power Module   MMBT5551LT1G Bipolar Transistors  
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