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BSS123LT1G N Channel MOSFE Enhanced FET 100V 170mA Silkscreen Patch

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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BSS123LT1G N Channel MOSFE Enhanced FET 100V 170mA Silkscreen Patch
Brand Name ON
Model Number BSS123LT1G
Place of Origin ON
Minimum Order Quantity 1
Price Can discuss
Payment Terms T/T
Supply Ability 3000
Packaging Details The cartons
Manufacturer onsemi
Product Category MOSFET
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Detailed Product Description

BSS123LT1G N Channel MOSFE Enhanced FET 100V 170mA Silkscreen Patch

 

BSS123LT1G Silk Screen SA SOT-23 N-channel Enhanced FET 100V/170mA Patch MOSFE

 

onsemi
MOSFET
RoHS:Details 
Si
SMD/SMT
SOT-23-3
N-Channel
1 Channel
100 V
170 mA
6 Ohms
- 20 V, + 20 V
1.6 V
-
- 55 C
+ 150 C
225 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand:onsemi 
Configuration:Single 
Forward Transconductance - Min:80 mS 
Height:0.94 mm 
Length:2.9 mm 
Product:MOSFET Small Signal 
Product Type:MOSFET 
Series:BSS123L 
30000 
Subcategory:MOSFETs 
Transistor Type:1 N-Channel 
Type:MOSFET 
Typical Turn-Off Delay Time:40 ns 
Typical Turn-On Delay Time:20 ns 
Width:1.3 mm 
Unit Weight:0.000282 oz
Product Tags: BSS123LT1G N Channel MOSFE   100V 170mA N Channel MOSFE   BSS123LT1G  
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