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IKW30N60H3 Flash Memory IC Chip Silkscreen K30H603 IGBT Transistors

IKW30N60H3 Flash Memory IC Chip Silkscreen K30H603 IGBT Transistors

Brand Name Infineon / IR
Model Number IKW30N60H3
Certification -
Place of Origin Germany
Minimum Order Quantity 10
Price Can discuss
Payment Terms T/T
Supply Ability 240PCS in a box
Packaging Details 240PCS in a box
Product Category IGBT Transistors
RoHS Details
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 600V
Collector-Emitter Saturation Voltage 1.95 V
Maximum Gate Emitter Voltage 20 V
Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 187 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Detailed Product Description

IKW30N60H3 Flash Memory IC Chip Silkscreen K30H603 IGBT Transistors

 

IKW30N60H3 K30H603 silk screen new imported triode IGBT high power welding tube IGBT Transistors 600V 30A 187W

 

Product AttributeAttribute Value
Infineon
IGBT Transistors
RoHS:Details
Si
TO-247-3
Through Hole
Single
600 V
1.95 V
20 V
60 A
187 W
- 40 C
+ 175 C
Trenchstop IGBT3
Tube
Brand:Infineon Technologies
Gate-Emitter Leakage Current:100 nA
Height:20.7 mm
Length:15.87 mm
Product Type:IGBT Transistors
Factory Pack Quantity:240
Subcategory:IGBTs
Tradename:TRENCHSTOP
Width:5.31 mm
Part # Aliases:IKW3N6H3XK SP000703042 IKW30N60H3FKSA1
Unit Weight:0.229281 oz

 
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Product Tags: IKW30N60H3 Flash Memory IC Chip   IGBT Flash Memory IC Chip   K30H603 IGBT Transistors  
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