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ntmfs4c09nt1g n mosfet transistor
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... Power MOSFET, High speed switching performances, package is H2PAK-7. Specification Of SCT040H120G3AG Part Number: SCT040H120G3AG Gate Threshold ...
2025-07-19 00:24:40
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...Transistors Product Description Of IPDQ60R017S7A IPDQ60R017S7A is optimised for low frequency switching and high current application like circuit ...
2025-07-19 00:24:40
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...33 Transistors. Specification Of IAUC40N08S5L140 Part Number: IAUC40N08S5L140 Technology: MOSFET (Metal Oxide) Power Dissipation (Max): 300W (Tc) ...
2025-07-19 00:24:44
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... charge balance technology for outstanding low on−resistance and lower gate charge performance. Specification Of NTHL027N65S3HF Part Number ...
2025-07-14 00:19:57
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.... Specification Of IMW120R014M1H Part Number: IMW120R014M1H Technology: SiC Mounting Style: Through Hole Transistor Polarity: N-Channel Number of ...
2025-07-19 00:24:44
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...Circuit Chip TO-247-4 Silicon Carbide Junction Transistor Product Description Of IMYH200R075M1H IMYH200R075M1H is CoolSiC™ 2000 V SiC Trench ...
2025-07-19 00:24:44
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...Channel NVHL040N120SC1 SiC Power Transistors 1200V Integrated Circuit Chip Product Description Of NVHL040N120SC1 NVHL040N120SC1 is 1200V, 40m, 60A ...
2025-07-14 00:20:05
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Single N-Channel Transistors NVH4L040N65S3F TO-247-4 Integrated Circuit Chip Product Description Of NVH4L040N65S3F NVH4L040N65S3F is 650V, 65A, ...
2025-07-14 00:20:05
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... device is a 1200 V, 79 A buck chopper silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120SKM31CTBL1NG Part Number MSCSM120SKM31CT...
2024-12-09 22:24:04
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... Transistors, package is D2PAK-7L. Specification Of NVBG020N090SC1 Part Number: NVBG020N090SC1 Vds - Drain-Source Breakdown Voltage: 900 V Id - ...
2025-07-14 00:20:06
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