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mosfet silicon carbide modules
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SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC ...
2025-07-14 00:19:58
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... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain ...
2025-07-19 00:24:44
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... Hole. Specification Of TW030N120C,S1F Part Number: TW030N120C,S1F Technology: SiCFET (Silicon Carbide) Input Capacitance: 2925pF Gate Threshold ...
2025-07-14 00:20:06
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...Modules 700V 241A 690W Chassis Mount SP3F Product Description Of MSCSM70AM10CT3AG The MSCSM70AM10CT3AG device is a phase leg 700 V/241 A full ...
2024-12-09 22:12:14
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... and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low ...
2025-07-14 00:20:05
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... reliability than Silicon. Specification Of NTBG040N120SC1 Part Number NTBG040N120SC1 Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V Vgs(th) (Max) @ Id 4...
2025-07-14 00:19:57
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...MOSFETs NTH4L022N120M3S N-Channel 1200V 68A 352W Through Hole TO-247-4L Product Description Of NTH4L022N120M3S NTH4L022N120M3S Silicon Carbide (SiC...
2025-07-14 00:19:57
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... using advanced and innovative 3rd generation SiC MOSFET technology. Specification Of SCT070HU120G3AG Part Number: SCT070HU120G3AG Total Power ...
2025-07-19 00:24:40
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1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole Product Description Of IMZ120R350M1H IMZ120R350M1H is CoolSiC™ ...
2025-07-14 00:20:07
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...silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, ...
2025-07-14 00:20:09
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