791 - 800 of 2656
igbt power driver module
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... and fast TRENCHSTOP™ IGBT4, Emitter Controlled HE diode and NTC. Specification Of FF300R12ME4 Part Number: FF300R12ME4 Product: IGBT Modules ...
2025-07-02 00:18:44
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...Emitter Controlled 4 diode. Specification Of FZ900R12KE4 Part Number: FZ900R12KE4 Product: IGBT Silicon Modules Configuration: Single Collector- ...
2025-07-04 07:30:28
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... with TRENCHSTOP™ IGBT3 and Emitter Controlled HE diode. Specification Of FS450R12KE3 Part Number: FS450R12KE3 Product: IGBT Silicon Modules ...
2025-07-05 00:22:05
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...IGBT Modules F3L400R10W3S7B11BPSA1 950V 400A 3 level IGBT module Detailed Description F3L400R10W3S7B11BPSA1 is 950 V, 400 A ANPC (active neutral ...
2025-07-20 00:22:40
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...IGBT Modules FF750R17ME7DB11BPSA1 Half Bridge Inverter IGBT Modules Product Description Of FF750R17ME7DB11BPSA1 FF750R17ME7DB11BPSA1 is IGBT Module ...
2025-07-20 00:22:40
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... and Emitter Controlled 4 diode and NTC. Specification Of FP75R12KT4-B16 Part Number: FP75R12KT4-B16 Series: EconoPIM™ 3 Configuration: Three Phase ...
2025-07-04 07:30:28
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...h TRENCHSTOP™ IGBT7 and 1200 V CoolSiC™ Schottky Diode. Specification Of F3L600R10W4S7F-C22 Series EasyPACK™ Part Status Active IGBT Type Trench ...
2025-07-04 07:30:28
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... FS660R08A6P2FLB onfiguration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 750 V Current - Collector (Ic) (Max) 450 A Power - ...
2025-07-20 00:22:40
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...IGBT Modules 1200V Silicon Carbide Product Description Of FF6MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1 is 2 N-Channel (Dual) Silicon Carbide (SiC) ...
2025-07-20 00:22:40
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...) of +80°C. Offering higher power density and a compact form factor, the SP4 package enables a lower quantity of modules in parallel to achieve ...
2024-12-09 22:12:14
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