SiC MOSFET NTHL040N120SC1 N-Channel 1200V 60A 348W Through Hole TO-247-3
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SiC MOSFET NTHL040N120SC1 N-Channel 1200V 60A 348W Through Hole TO-247-3
Product Description Of NTHL040N120SC1 NTHL040N120SC1 1200V EliteSiC (Silicon Carbide) MOSFETs feature completely new technology and provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.
Specification Of NTHL040N120SC1
Applications Of NTHL040N120SC1
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