IMBG65R039M1H N-Channel 650V MOSFETs Transistors SiC Trench Power Device

IMBG65R039M1H N-Channel 650V MOSFETs Transistors SiC Trench Power Device

Product Description Of IMBG65R039M1H

IMBG65R039M1H GaN enhancement-mode power transistors are available in a ThinPAK 5x6 surface-mount package, ideal for applications that require a compact device without a heatsink.

Specification Of IMBG65R039M1H

Features Of​ IMBG65R039M1H

• Lower Rs(on) and pulse current dependency on temperature

• Increased avalanche capability

Other Supply Product Types

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.