SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

Product Description Of IMBG65R163M1H

IMBG65R163M1H suitable for high temperature and harsh operations,it enables the simplified and cost effective deployment of the highest system efficiency.

Specification Of IMBG65R163M1H

Features Of​ IMBG65R163M1H

• Superior gate oxide reliability

• Tj.max=175"C and excellent thermal behavior

Other Supply Product Types

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.