10M50DCF256I7G High Bandwidth Low Latency Field Programmable Gate Array

10M50DCF256I7G High Bandwidth Low Latency Field Programmable Gate Array

Product Description Of 10M50DCF256I7G

10M50DCF256I7G's eSRAM blocks is a new innovation. These large embedded SRAM blocks are tightly coupled to the core fabric and are directly accessible with no need for a separate memory controller. Each eSRAM block is arranged as 8 channels, 40 banks per channel, with a total capacity of 47.25 Mbits running at clock rates up to 750 MHz. Within the eSRAM block,each channel has a bus width of 72 bit read and 72 bit write, and has one READ and one WRITE per channel. This allows each eSRAM block to support a total aggregate bandwidth (read + write) of up to 864 Gbps.

Product Attributes Of 10M50DCF256I7G

Features Of 10M50DCF256I7G

• NAND flash controller

• Integrated descriptor based with DMA

• Programmable hardware ECC support

• Support for 8 and 16 bit Flash devices

• Secure Digital SD/SDIO/MMC controller

• Integrated descriptor based DMA

• CE-ATA digital commands supported

• 50 MHz operating frequency

• Direct memory access (DMA) controller

• Supports up to 32 peripheral handshake interface

Hard Memory Controller Of 10M50DCF256I7G

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.