10M50DCF256I7G High Bandwidth Low Latency Field Programmable Gate Array
|
|
10M50DCF256I7G High Bandwidth Low Latency Field Programmable Gate Array
Product Description Of 10M50DCF256I7G 10M50DCF256I7G's eSRAM blocks is a new innovation. These large embedded SRAM blocks are tightly coupled to the core fabric and are directly accessible with no need for a separate memory controller. Each eSRAM block is arranged as 8 channels, 40 banks per channel, with a total capacity of 47.25 Mbits running at clock rates up to 750 MHz. Within the eSRAM block,each channel has a bus width of 72 bit read and 72 bit write, and has one READ and one WRITE per channel. This allows each eSRAM block to support a total aggregate bandwidth (read + write) of up to 864 Gbps.
Product Attributes Of 10M50DCF256I7G
Features Of 10M50DCF256I7G
Hard Memory Controller Of 10M50DCF256I7G
FAQ |
|
Field Programmable Gate Array XCZU11EG-2FFVC1156E System On Chip FCBGA1156 SoC FPGA |
|
Field Programmable Gate Array XCZU9CG-2FFVB1156E 599K Logic Cells System On Chip |
|
Field Programmable Gate Array XCZU5EV-1FBVB900E 3.5 Mbit Embedded System On Chip FPGA IC |
|
Field Programmable Gate Array XCKU115-1FLVA2104C High-Performance Kintex UltraScale FPGAs |
|
Field Programmable Gate Array 5ASTMD5E3F31I3G 64KB Arria V ST ARM Cortex-A9 FPGA IC |
|
Field Programmable Gate Array 5ASTFD5G3F35I3G 350K Logic Elements Arria V ST FPGA IC |