LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

GaN IC LMG3410R070RWHR Power Switch Driver GaN with integrated driver and protection

Specifications

Description

LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

LMG341xR070 inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

Features

• GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles

• Enables High Density Power Conversion Designs

• Superior System Performance Over Cascode or Stand-alone GaN FETs

• Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout

• Adjustable Drive Strength for Switching Performance and EMI Control

• Digital Fault Status Output Signal

• Only +12 V Unregulated Supply Needed

• Integrated Gate Driver

• Zero Common Source Inductance

• 20 ns Propagation Delay for MHz Operation

• Process-tuned Gate Bias Voltage for Reliability

• 25 to 100V/ns User Adjustable Slew Rate

• Robust Protection

• Requires No External Protection Components

• Over-current Protection with <100ns Response

• >150V/ns Slew Rate Immunity

• Transient Overvoltage Immunity

• Overtemperature Protection

• UVLO Protection on All Supply Rails

Simplified Block Diagram

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FAQ
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A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
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Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.