LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver
|
|
Gate Drivers LMG3425R030RQZR GaN FET with integrated driver and ideal diode mode VQFN54
Description LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.
Specifications
Applications
Features Qualified for JEDEC JEP180 for hard-switching topologies • 600 -V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 2.2 -MHz switching frequency – 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • Robust protection – Cycle-by-cycle overcurrent and latched short- circuit protection with < 100-ns response – Withstands 720-V surge while hard-switching – Self-protection from internal overtemperature and UVLO monitoring • Advanced power management – Digital temperature PWM output – Ideal diode mode reduces third-quadrant losses in LMG3425R030
Measurement to Determine Propagation Delays and Slew Rates
Qualified for JEDEC JEP180 for hard-switching topologies • 600 -V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 2.2 -MHz switching frequency – 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • Robust protection – Cycle-by-cycle overcurrent and latched short- circuit protection with < 100-ns response – Withstands 720-V surge while hard-switching – Self-protection from internal overtemperature and UVLO monitoring • Advanced power management – Digital temperature PWM output – Ideal diode mode reduces third-quadrant losses in LMG3425R030 Qualified for JEDEC JEP180 for hard-switching topologies • 600 -V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 2.2 -MHz switching frequency – 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply • Robust protection – Cycle-by-cycle overcurrent and latched short- circuit protection with < 100-ns response – Withstands 720-V surge while hard-switching – Self-protection from internal overtemperature and UVLO monitoring • Advanced power management – Digital temperature PWM output – Ideal diode mode reduces third-quadrant losses in LMG3425R030 FAQ |
|||||||||||||||||||||||||||
| Product Tags: LMG3425R030RQZR Gan Fet Gate Driver Gan Fet Gate Driver VQFN54 VQFN54 Integrated Half Bridge Gan Driver |
|
GaN IC NV6133A-RA N-Channel 4A Power Distribution Switches |
|
LMG3410R150RWHR GaN IC 150mohm Gan FET Driver Load Drivers Smart |
|
NV6123 Fast Charging Chip GaNFast Power IC 650V Load Drivers IC QFN30 Switches |
|
Fast Charging Chip NV6127 650V 12A Power Distribution Switches IC 30-QFN |
|
GaN IC NV6138A-RA N-Channel 12A Load Drivers 30-QFN |
|
GaN IC NV6154 GaNFast Power IC 9V To 24V Load Drivers IC |