S12060-10 Near - infrared Silicon Avalanche Photodiode For Mainly Including Optical Rangefinders

                          S12060-10 Near - infrared Silicon Avalanche Photodiode For Mainly Including Optical Rangefinders

Key Features:

It has a low breakdown voltage temperature coefficient of 0.4 V/℃, which ensures stable operation in a wide temperature range and is not easily affected by environmental temperature changes.

1. Boasts high - speed response performance with a typical cut - off frequency of 600 MHz, enabling rapid capture and conversion of optical signals.
2. Combines high sensitivity (0.5 A/W typical value) and low noise (maximum dark current of 2 nA), which can accurately detect weak near - infrared optical signals.
3. The metal TO - 18 package has good structural stability and is convenient for installation and integration in various electronic devices.

Typical Applications:

This sensor is widely used in scenarios requiring high - precision near - infrared optical detection, mainly including optical rangefinders, free space optics (FSO) systems, medical diagnostic equipment, optical communication devices, and other fields that demand stable optical signal detection under variable temperature conditions.