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Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance

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ShenzhenYijiajie Electronic Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86--13352990255

Contact Person:
Miss.Xu
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Silicon Photodiodes S1337-1010BR S1337-1010BQ Low Capacitance

Model Number S1337-1010BR S1337-1010BQ
Place of Origin Japan
Minimum Order Quantity 1
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 5000pcs
Delivery Time 3-5work days
Packaging Details Paper box
Light-receiving side 10 × 10 mm
encapsulation ceramics
refrigeration Non-cooled
Reverse voltage (max) 5 V
Spectral response range 190 to 1100 nm
Dark current (max) 200 pA
Detailed Product Description

Silicon photodiodes S1337-1010BQ

It is suitable for precise photometry in the ultraviolet to infrared band

Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance

Maximum Sensitivity Wavelength (Typical)960 nm
Light sensitivity (typical)0.5 A/W
Rise Time (Typical)3 μs
Junction Capacitance (typical)1100 pF
Noise equivalent power (typical)1.8×10-14 W/Hz1/2

 

Silicon photodiodes S1337-1010BR

It is suitable for precise photometry in the ultraviolet to infrared band

Features
- Low capacitance

 

Light-receiving side10 × 10 mm
encapsulationceramics
Spectral response range340 to 1100 nm
Maximum Sensitivity Wavelength (Typical)960 nm
Light sensitivity (typical)0.62 A/W
Dark current (max)200 pA

 

 

 

Product Tags: Low Capacitance Silicon Photodiodes   S1337-1010BR Silicon Photodiodes   S1337-1010BQ Silicon Photodiodes  
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