S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package
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S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package
Features: Hamamatsu photosensitive photodiode silicon photocell High performance, High reliability Si PIN photodiodes High performance, high reliability silicon PIN photodiode Parameter name value Encapsulated ceramic Sensitive zone diameter/length mm 2.8 The minimum wavelength is 320 nm The maximum wavelength is 730 nm The peak wavelength is 560 nm Peak sensitivity A/W 0.3 Maximum dark current (nA) 0.01 Rsh Ω (G) 100 TR (us) 2.5 CT (pF) 700 Part of the photodetector covers common photodiodes, avalanche diodes, and photomultiplier tubes that form from x-rays to ultraviolet, visible light , near infrared, up to 3000nm in the middle infrared band;Package form from Chip Level to Components Level, Module Level of various semiconductor laser diodes Professional sales of Japan hamamatsu optoelectronic devices, optical reception, silicon photodiode, photoelectric detection devices optical detection components
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