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FDC3535 Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V...
2024-12-09 22:37:47
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...Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination ...
2024-12-09 22:37:47
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...12A Washable types available Low coil power consumption Applications Home appliances, Air conditioner,heater,etc. Office machines, PC, facsimile, ...
2024-12-09 22:37:47
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... high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The ...
2024-12-09 22:37:47
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power ...
2024-12-09 22:37:47
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...Power Amplifier Features • High Current Capability: IC = 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO...
2024-12-09 22:38:38
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...-440V high voltage power mosfet Features Axial lead type devices for through hole design .1500W peak pulse power capability with a 10/1000us ...
2024-12-09 22:38:51
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... • High-Bandwidth Data Path (up to 500 MHz (1) ) •5-V Tolerant I/Os With Device Powered Up or Powered Down •Low and Flat ON-State Resistance (r on...
2024-12-09 22:42:04
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... describes PR/PF/PH series current sensor - low TCR with lead-free terminations made by metal substrate. APPLICATIONS Power Management Applications ...
2024-12-09 22:48:58
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...power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to ...
2024-12-09 22:59:53
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