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high power igbt module
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... Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ...
2024-12-09 22:38:38
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TDA2003A 10 W car radio audio amplifier Features ■ Improved performance over the TDA2002 (pinto-pin compatible) ■ Very low number of external ...
2024-12-09 22:38:51
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TDA2030A 18W Hi-Fi AMPLIFIER AND 35W DRIVER DESCRIPTION The TDA2030A is a monolithic IC in Pentawatt package intended for use as low frequency class ...
2024-12-09 22:38:51
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Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ...
2024-12-09 22:41:27
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ...
2024-12-09 22:41:27
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BT139 series E Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general ...
2024-12-09 22:41:27
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ...
2024-12-09 22:41:27
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800mA Low-Dropout Linear Regulator Features ► Available in 1.8V, 2.5V, 2.85V, 3.3V, 5V, and Adjustable Versions ► Space Saving SOT-223 and LLP ...
2024-12-09 22:41:27
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PROGRAMMABLE SHUNT VOLTAGE REFERENCE ■ ADJUSTABLE OUTPUT VOLTAGE 2.5 to 24V ■ SEVERAL PRECISION @ 25°C ±2%, ±1% and ±0.5% ■ SINK CURRENT CAPABILITY 1 ...
2024-12-09 22:41:27
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PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial ...
2024-12-09 22:41:27
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