China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high power igbt module

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details
751 - 760 of 1874

high power igbt module

Selling leads
... Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining ... 2024-12-09 22:38:38
IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 ... 2024-12-09 22:38:38
Silicon PNP DarliCM GROUPon Power Transistors DESCRIPTION ·With TO-220C package ·DARLICM GROUPON ·High DC current gain ·Low collector saturation ... 2024-12-09 22:38:38
Silicon NPN DarliCM GROUPon Power Transistors 2SD2390 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ... 2024-12-09 22:38:38
SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ... 2024-12-09 22:38:51
AD8062ARZ Low Cost, 300 MHz Rail-to-Rail Amplifiers FEATURES Low cost Single (AD8061), dual (AD8062) Single with disable (AD8063) Rail-to-rail output ... 2024-12-09 22:38:51
... Voltage − VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 • High Current Gain − Bandwidth Product fT = 30 MHz ... 2024-12-09 22:38:51
STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET • TYPICAL ... 2024-12-09 22:38:51
... to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized ... 2024-12-09 22:41:27
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