861 - 870 of 2033
high power diode
Selling leads
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel ...
2024-12-09 22:38:51
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... • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = ...
2024-12-09 22:38:51
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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET
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... Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A ...
2024-12-09 22:41:27
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SOT-23 Plastic-Encapsulate Transistors FEATURES ► Complementary to S9013 ► Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless ...
2024-12-09 22:41:27
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... lowest total cost for high-volume applications. The thirteen-member family delivers expanded densities ranging from 3,840 to 147,443 logic cells, ...
2024-12-09 22:42:04
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... capabilities with the lowest total cost for high-volume applications. The thirteen-member family delivers expanded densities ranging from 3,840 to ...
2024-12-09 22:42:04
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...Power Programmable IC Chips Slew Rate Limited Transceivers timer circuit board Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers ♦ For ...
2024-12-09 22:42:04
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...Driver maintains high impedance in 3-state or with the power OFF ■ 70 mV typical input hysteresis ■ 30 ns propagation delay, 5 ns skew ■ Operate ...
2024-12-09 22:42:04
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...POWER MOSFET TYPE VDSS RDS(on) ID STN3NF06 60 V < 0.1 Ω 4 A ■ TYPICAL RDS(on) = 0.07 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ ...
2024-12-09 22:42:04
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... applications. Both circuits feature high noise immunity and low power consumption usually associated with CMOS circuitry, yet have speeds ...
2024-12-09 22:42:04
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