NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor
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NDT456P P-Channel Enhancement Mode Field Effect Transistor
Features ♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V ♦High density cell design for extremely low RDS(ON) ♦High power and current handling capability in a widely used surface mount package.
General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
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Product Tags: diode rectifier circuit signal schottky diode |