NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

NDT456P P-Channel Enhancement Mode Field Effect Transistor

Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.

General Description

Power SOT P-Channel enhancement mode power field  effect transistors are produced using Fairchild's  proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.