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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

Brand Name FAIRCHILD
Model Number NDT456P
Certification Original Factory Pack
Place of Origin Philippines
Minimum Order Quantity 20
Price Negotiate
Payment Terms T/T, Western Union,Paypal
Supply Ability 20000
Delivery Time 1
Packaging Details please contact me for details
Description P-Channel 30 V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current ±7.5 A
Operating and Storage Temperature Range -65 to 150 °C
Thermal Resistance, Junction-to-Ambien 42 °C/W
Thermal Resistance, Junction-to-Case 12 °C/W
Detailed Product Description

NDT456P P-Channel Enhancement Mode Field Effect Transistor

 

Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.

 

 

General Description

Power SOT P-Channel enhancement mode power field  effect transistors are produced using Fairchild's  proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. 

 

Symbol Parameter NDT456P Units
VDSS Drain-Source Voltage-30V
VGSSGate-Source Voltage±20 V
TJ ,TSTG  Operating and Storage Temperature Range65 to 150°C
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a)42 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1)12°C/W

 

Product Tags: diode rectifier circuit   signal schottky diode  
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