IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	INFINEON/IR
Model Number	IRGB10B60KDPBF
Certification	CE/ RoHS
Place of Origin	Germany
Minimum Order Quantity	5-10pcs
Price	To be negotiated
Payment Terms	T/T, Western Union,paypal
Supply Ability	10,000PCS
Delivery Time	in stock 2-3days
Packaging Details	Tube
Description	IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB
PN	IRGB10B60KDPBF
Brand	INFINEON/IR
Original	Germany
Type	Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage	IGBT 600V 22A 156W
Package	TO220AB

Detailed Product Description

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

Part Number	IRGB10B60KDPBF
Manufacturer	Infineon
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer	Infineon
Packaging	Tube
Original	Germany
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	22A
Current - Collector Pulsed (Icm)	44A
Vce(on) (Max) @ Vge Ic	2.2V @ 15V 10A
Power - Max	156W
Switching Energy	140µJ (on) 250µJ (off)
Input Type	Standard
Gate Charge	38nC

Product Tags: 156W Insulated Gate Bipolar Transistor 22A Insulated Gate Bipolar Transistor IGBT Bipolar Recovery Diode

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