China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
3
Home > Products > IGBT Power Module >

STK621-033N-E Mosfet Power Module Hybrid Inverter Circuit SIP Full Molded

Browse Categories

ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details

STK621-033N-E Mosfet Power Module Hybrid Inverter Circuit SIP Full Molded

Brand Name SANYO
Model Number STK621-220A
Certification Original Factory Pack
Place of Origin Philippines
Minimum Order Quantity 5pcs
Price Negotiate
Payment Terms T/T, Western Union,Paypal
Supply Ability 180pcs
Delivery Time 1
Packaging Details please contact me for details
Description Half Bridge (3) Driver AC Motors IGBT 23-SIP
Features1 Very low DCR; excellent current handling
Features2 Miniature 3.0 × 3.0 mm footprint; less than 1.5 mm tall
Features3 RoHS compliant silver-palladium-platinum-glass frit. Other terminations available at additional cost.
Weight t 40 – 45 mg
Ambient temperature e –40°C to +85°C with Irms current, +85°C to +125°C with derated current
Storage temperature Component: –40°C to +125°C. Packaging: –40°C to +80°C
Detailed Product Description

STK621-220A Mosfet Power Module Hybrid Inverter Circuit SIP Full Molded

 

 

STK621-220A INVERTER POWER HYBRID MODULE

SIP Full Molded Package

 

Overview

This IC is a 3-phase inverter power hybrid IC containing power elements (IGBT and FRD), pre-driver, overcurrent and excessive temperature protection circuit.

 

Application

• 3-phase inverter motor drive

 

Features

• Integrates power elements (IGBT and FRD), pre-driver, and protective circuit.

• Protective circuits including overcurrent (bus line), excessive temperature and pre-drive low voltage protection are built in.

• Direct input of CMOS level control signals without an insulating circuit (photocoupler, etc) is possible.

• Single power supply drive is possible by using a bootstrap circuit with a built-in IC

• Temperature monitor is possible by the thermistor inside the IC

• Built-in simultaneous upper/lower ON prevention circuit to prevent arm shorting through simultaneous ON input for the upper and lower side transistors. (Dead time is required for preventing shorting due to switching delay.)

• SIP (The single in-line package) of the transfer full mold structure.

 

Specifications Absolute

Maximum Ratings at Tc = 25°C

 

ParameterSymbolConditionRatingsUnit
Supply voltageVcc+ - −, surge < 500V450V
Collector-emitter voltageVce+ - U (V, W) or U (V, W)600V
Output currentIo+, −, U, V, W terminal current±30A
Output peak currentLop+, −, U, V, W terminal current PW = 100μs±45A
Pre-driver supply voltageVD1,2,3,4VB1 - U, VB2 - V, VB3 - W, VDD - VSS20V
Input signal voltageVinHIN1, 2, 3, LIN1, 2, 3 terminal0 to 7V
FAULT terminal voltageVFAULTFAULT terminal20V
Maximum lossPdPer 1 channel49W
Junction temperatureTjIGBT, FRD junction temperature150°C
Storage temperatureTstg -40 to +125 °C
Operating temperatureTcH-IC case temperature-20 to +100°C
Tightening torque A screw part at use M4 type screw1.17N-m
Withstand voltage Vis50Hz sine wave AC 1 minute2000VRMs

In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage. *1 Surge voltage developed by the switching operation due to the wiring inductance between the + and –terminals. *2 VD1 = between VB1-U, VD2 = VB2-V, VD3 = VB3-W, VB4 = VDD-VSS, terminal voltage. *3 Flatness of the heat-sink should be lower than 0.25mm. *4 The test condition is AC 2500V, 1 second.

 

 

Notes

1. Input ON voltage indicates a value to turn on output stage IGBT. Input OFF voltage indicates a value to turn off output stage IGBT. At the time of output ON, set the input signal voltage 0V to VIH (MAX). At the time of output OFF, set the input signal voltage VIL (MIN) to 5V.

2. When the internal protection circuit operates, there is a Fault signal ON (When the Fault terminal is low level, Fault signal is ON state : output form is open DRAIN) but the Fault signal doesn't latch. After protection operation ends, it returns automatically within about 18ms to 80ms and resumes operation beginning condition. So, after Fault signal detection, set OFF (HIGH) to all input signals at once. However, the operation of pre-drive power supply low voltage protection (UVLO: it has a hysteresis about 0.3V) is as follows. Upper side → There is no Fault signal output, but it does a corresponding gate signal OFF. Incidentally, it returns to the regular operation when recovering to the normal voltage, but the latch continues among input signal ON (LOW). Lower side → It outputs Fault signal with gate signal OFF. However, it is different from the protection operation of upper side, it is automatically resets about 18ms to 80ms later and resumes operation beginning condition when recovering to normal voltage. (The protection operation doesn't latch by the input signal.)

3. When assembling the hybrid IC on the heat sink with M4 type screw, tightening torque range is 0.79N•m to 1.17N•m. Flatness of the heat-sink should be lower than 0.25mm.

4. The pre-drive low voltage protection is the feature to protect a device when the pre-driver supply voltage declines with the operating malfunction. As for the pre-driver supply voltage decline in case of operation beginning, and so on, we request confirmation in the set.

 

 

Product Tags: thyristor diode module   hybrid inverter circuit  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: ChongMing Group (HK) Int'l Co., Ltd
Subject:
Message:
Characters Remaining: (80/3000)