FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

FGH40N60SMD Mosfet Power Module st power mosfet IGBT Power Module

Model Number	FGH40N60SMD
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8500pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	IGBT Field Stop 600 V 80 A 349 W Through Hole TO-247-3
Collector to Emitter Voltage	600 V
Gate to Emitter Voltage	± 20 V
Pulsed Collector Current	120 A
Pulsed Diode Maximum Forward Current	120 A
Operating Junction Temperature	-55 to +175℃
Storage Temperature	-55 to +175℃

Detailed Product Description

FGH40N60SMDF

600V, 40A Field Stop IGBT

Features

• Maximum Junction Temperature : T_J =175℃

• Positive Temperaure Co-efficient for easy parallel operating

• High current capability

• Low saturation voltage: V_CE(sat) =1.9V(Typ.) @ I_C = 40A

• High input impedance

• Fast switching

• Tighten Parameter Distribution

• RoHS compliant

Applications

• Solar Inverter, UPS, SMPS, PFC

• Induction Heating

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.

Absolute Maximum Ratings

Symbol	Description	Ratings	Units
V_CES	Collector to Emitter Voltage	600	V
V_GES	Gate to Emitter Voltage	± 20	V
I_C	Collector Current @ T_C = 25℃	80	A
I_C	Collector Current @ T_C = 100℃	40	A
I_{CM (1)}	Pulsed Collector Current	120	A
I_F	Diode Forward Current @ T_C = 25℃	40	A
I_F	Diode Forward Current @ T_C = 100℃	20	A
I_{FM (1)}	Pulsed Diode Maximum Forward Current	120	A
P_D	Maximum Power Dissipation @ T_C = 25℃	349	W
P_D	Maximum Power Dissipation @ T_C = 100℃	174	W
T_J	Operating Junction Temperature	-55 to +175	℃
Tstg	Storage Temperature Range	-55 to +175	℃
T_L	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	℃

Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature.

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

EL817B-F	12000	EL	16+	DIP
EL817C-F	12000	EVERLIGHT	16+	DIP
EL817S(A)(TA)-F	68000	EVERLIGHT	12+	SOP-4
EM639165TS-6G	7930	ETRONTECH	15+	TSOP-54
EM63A165TS-6G	13467	ETRONTECH	14+	TSOP-54
EM78P459AKJ-G	9386	EMC	15+	DIP-24
EMI2121MTTAG	5294	ON	15+	DFN
ENC28J60-I/SO	7461	MICROCHIP	16+	SOP-28
EP1C3T144C8N	3452	ALTERA	13+	QFP144
EP3C5F256C8N	2848	ALTERA	15+	BGA
EP3C80F780I7N	283	ALTERA	16+	BGA
EP9132	3575	EXPLORE	16+	TQFP-80
EPC1213LC-20	3527	ALT	03+	PLCC20
EPC1213PC8	8853	ALTERA	95+	DIP-8
EPC2LI20N	2794	ALTERA	13+	PLCC
EPM7032SLC44-10N	2472	ALTERA	13+	PLCC44
EPM7064SLC44-10N	2498	ATLERA	15+	PLCC
EPM7128SQC100-10N	1714	ALTERA	12+	QFP
ERA-1SM+	3210	MINI	15+	SOT-86
ES1B-E3/61T	18000	VISHAY	14+	DO-214AC
ES2G-E3/52T	12000	VISHAY	16+	SMB
ES2J-E3/52T	12000	VISHAY	13+	DO-214AA
ES3J	12000	FSC	15+	SMC
ES56031S	3498	ES	16+	SOP-24
ESAD92-02	6268	FUIJ	16+	TO-3P
ESD112-B1-02EL E6327	23000		15+	TSLP-2-20
ESD5Z5.0T1G	9000	ON	13+	SOD-523
ESD5Z7.0T1G	12000	ON	16+	SOD-523
ESDA6V1SC5	51000	ST	15+	SOT23-5
ESP-12E	3991	AI	16+	SMT

Product Tags: thyristor diode module low voltage power mosfet

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