DS1216C Mosfet Power Module IGBT Power Module SmartWatch RAM & ROM
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DS1216 SmartWatch RAM (DS1216B/C/D/H); SmartWatch ROM (DS1216E/F)
GENERAL DESCRIPTION The DS1216 SmartWatch RAM and SmartWatch ROM sockets are 600-mil-wide DIP sockets with a built-in CMOS watch function, an NV RAM controller circuit, and an embedded lithium energy source. The sockets provide an NV RAM solution for memory sized from 2K x 8 to 512K x 8 with package sizes from 26 pins to 32 pins.
When a socket is mated with a CMOS SRAM, it provides a complete solution to problems associated with memory volatility and uses a common energy source to maintain time and date. The SmartWatch ROM sockets use the embedded lithium source to maintain the time and date only.
A key feature of the SmartWatch is that the watch function remains transparent to the RAM. The SmartWatch monitors VCC for an out-of-tolerance condition. When such a condition occurs, an internal lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent loss of watch and RAM data.
FEATURES
ABSOLUTE MAXIMUM RATINGS Voltage Range on any Pin Relative to Ground………………………………….…………-0.3V to +6.0V Operating Temperature Range…………………………………………………………..…...0°C to +70°C Storage Temperature Range…………………………………………………………..…...-40°C to +85°C Lead Temperature (soldering, 10s) ………......................................................................…...+260°C
Note: Wave or hand-solder only. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect reliability.
TYPICAL OPERATING CIRCUIT
PIN CONFIGURATIONS
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