Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary
Package Operating Voltage
Vbb(on) |
5.0...34V |
Active channels | one | two parallel | On-state Resistance
RON | 30mΩ | 15mΩ | Nominal load current
IL(NOM) | 5.5A | 8.5A | Current limitation
IL(SCr) | 24A | 24A |
General Description • N channel vertical power MOSFET with charge pump, ground
referenced CMOS compatible input, diagnostic feedback and proportional load current
sense monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with diagnostic feedback for
12V and 24V grounded loads • All types of resistive, inductive and capacitve loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits Basic Functions • CMOS compatible input • Undervoltage and overvoltage shutdown with auto-restart and
hysteresis • Fast demagnetization of inductive loads • Logic ground independent from load ground Protection Functions • Short circuit protection • Overload protection • Current limitation • Thermal shutdown • Overvoltage protection (including load dump) with external resistor • Reverse battery protection with external resistor • Loss of ground and loss of Vbb protection • Electrostatic discharge protection (ESD) Diagnostic Functions • Proportinal load current sense • Diagnostic feedback with open drain output • Open load detection in OFF-state with external resistor • Feedback of thermal shutdown in ON-state Functional diagram
Maximum Ratings at Tj = 25°C unless otherwise specified Parameter | Symbol | Values | Unit | Supply voltage | Vbb | 43 | V | Supply voltage for full short circuit protection Tj,start =-40 ...+150°C | Vbb | 34 | V | Load current | IL | self-limited | A | Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI 2) = 2 Ω, td = 200 ms; IN= low or high, each channel loaded with RL = 7.0 Ω, | VLoaddump3) | 60 | V | Operating temperature range Storage temperature range | Tj Tstg | -40 ...+150 -55 ...+150 | °C | Power dissipation (DC)4)
Ta = 25°C: (all channels active)
Ta = 85°C: | Ptot | | | Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C4), IL = 5.5 A, EAS = 370 mJ, 0Ω
one channel: IL = 8.5 A, EAS = 790 mJ, 0Ω
two parallel channels: | ZL | 18 16 | mH | Electrostatic discharge capability (ESD)
IN: (Human Body Model)
ST, IS:
out to all other pins
shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5kΩ; C=100pF | VESD | 1.0 4.0 8.0 | kV | Input voltage (DC) | VIN | -10 ... +16 | V | Current through input pin (DC) Current through status pin (DC) Current through current sense pin (DC) | IIN IST IIS | ±2.0 ±5.0 ±14 | mA |
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