Integratedcircuits Electronics ADG918BRMZ Wideband 4 GHz 43 dB Isolation

Integratedcircuits Electronics ADG918BRMZ Wideband 4 GHz 43 dB Isolation

ADG918BRMZ Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

FUNCTIONAL BLOCK DIAGRAMS              

FEATURES

Wideband switch: −3 dB @ 4 GHz                      

 Absorptive/reflective switches

High off isolation (43 dB @ 1 GHz)

Low insertion loss (0.8 dB @1 GHz)

Single 1.65 V to 2.75 V power supply

CMOS/LVTTL control logic

8-lead MSOP and tiny 3 mm × 3 mm LFCSP packages

Low power consumption (<1 μA)

APPLICATIONS  

Wireless communications

General-purpose RF switching

Dual-band applications

High speed filter selection

Digital transceiver front end switch

IF switching

Tuner modules

Antenna diversity switching

GENERAL DESCRIPTION

The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless and general-purpose high frequency switching

applications.

PRODUCT HIGHLIGHTS

1. –43 dB off isolation @ 1 GHz.

2. 0.8 dB insertion loss @ 1 GHz.

3. Tiny 8-lead MSOP/LFCSP packages.

SPECIFICATIONS

VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all specifications TMIN to TMAX, unless otherwise noted. Temperature range for B Version: −40°C to +85°C.

1 Typical values are at VDD = 2.5 V and 25°C, unless otherwise stated.

2 Point at which insertion loss degrades by 1 dB.

3 Guaranteed by design, not subject to production test.

4 The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50 Ω test setup, measured with 1 ns rise time pulses and 500 MHz bandwidth.