N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

Browse Categories

ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

Brand Name	FSC
Model Number	FDS6676AS
Certification	Original Factory Pack
Place of Origin	Malaysia
Minimum Order Quantity	5pcs
Price	negotiation
Payment Terms	T/T in advance or others
Supply Ability	1000PCS
Packaging Details	please contact me for details
Delivery Time	1 Day
Description	N-Channel 30 V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Drain-Source Voltage	30V
Main Line	Ic,module,transistor,diodes,capacitor,resistor etc
Gate-Source Voltage	±20V
Temperature	-50-+150°C
Factory Pack	2500pcs/Reel
Package	SOP-8

Detailed Product Description

N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous

DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

Features

• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (45nC typical)

• High performance trench technology for extremely low RDS(ON) and fast switching

• High power and current handling capability

Absolute Maximum Ratings TA=25o C unless otherwise noted

Symbol	Parameter	Rating	Unit
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current – Continuous (Note 1a) – Pulsed	14.5	A
ID	Drain Current – Continuous (Note 1a) – Pulsed	50	A
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.5
		1
TJ, TSTG	Operating and Storage Junction Temperature Range	–55 to +150	°C

Thermal Characteristics

R_θJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	W/°C
R_θJC	Thermal Resistance, Junction-to-Case (Note 1)	25	W/°C

Package Marking and Ordering Information

Device Marking	Device	Reel Size	Tape width	Quantity
FDS6676AS	FDS6676AS	13“	12MM	2500 units
FDS6676AS	FDS6676AS_NL	13”	12MM	2500 units

Product Tags: electronic chip board electronic components ic

Related Products

GRM033R71C272KA88D NEW AND ORIGINAL STOCK

FOD2742B Flash Memory IC NEW AND ORIGINAL STOCK

EMH4T2R Flash Memory IC NEW AND ORIGINAL STOCK

EM250-RTR Flash Memory IC NEW AND ORIGINAL STOCK

CC2541F256RHAR Flash Memory IC NEW AND ORIGINAL STOCK

CC2420RGZT Flash Memory IC NEW AND ORIGINAL STOCK

Email to this supplier


From:	Enter your Email please. Your email is incorrect!
To:	ChongMing Group (HK) Int'l Co., Ltd
Subject:	Subject is empty!
Message:	Characters Remaining: (80/3000) Please enter 20 to 3000 characters to contact this supplier!