N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous

DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

Features

• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (45nC typical)

• High performance trench technology for extremely low RDS(ON) and fast switching

• High power and current handling capability

Absolute Maximum Ratings TA=25o C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information