TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode

FEATURES                                 

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): ∅ 3

• Peak waveleCM GROUPh: λp = 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 25°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

APPLICATIONS

• Infrared remote control units

• Free air transmission systems

• Infrared source for optical counters and card readers

Note

Test conditions see table “Basic Characteristics“