TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode
FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak waveleCM GROUPh: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.
APPLICATIONS • Infrared remote control units • Free air transmission systems • Infrared source for optical counters and card readers
Note Test conditions see table “Basic Characteristics“
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Product Tags: diode rectifier circuit bridge rectifier circuit |