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RF Integrated Circuit Chip BYG23M-E3/TR Ultrafast Avalanche SMD Rectifier

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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RF Integrated Circuit Chip BYG23M-E3/TR Ultrafast Avalanche SMD Rectifier

Brand Name VISHAY
Model Number BYG23M-E3-TR
Certification Original Factory Pack
Place of Origin Malaysia
Minimum Order Quantity 5pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 1200PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)
package Low profile package
Application Ideal for automated placement
junction Glass passivated junction
current Low reverse current
voltage High reverse voltage
recovery time Ultra fast reverse recovery time
Detailed Product Description

RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier

 

 

FEATURES

 

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• High reverse voltage

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

 

 

 

 

 

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.

 

MECHANICAL DATA

Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating

 

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test

 

Polarity: Color band denotes the cathode end

 

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

 

PARAMETER SYMBOL BYG23M UNIT
Device marking code  BYG23M 
Maximum repetitive peak reverse voltage VRRM 1000V
Average forward current        TA = 65 °CIF(AV) 1.5A

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

IFSM30 A

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C

ER 20 mJ
Operating junction and storage temperature rangeTJ, TSTG- 55 to + 150C

 

 

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

 

 

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

 

Product Tags: diode rectifier circuit   signal schottky diode  
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