TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak waveleCM GROUPh λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component
 
Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.
 
This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability
 

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

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