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Green Mode Fairchild Power Switch Field Effect Transistor , FSDM0465RBWDTU

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Green Mode Fairchild Power Switch Field Effect Transistor , FSDM0465RBWDTU

Model Number FSDM0465R
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 5600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Converter Offline Flyback Topology 66kHz TO-220F-6L (Forming)
Drain-Source Breakdown Voltage 650 V
Drain-Gate Voltage 650 V
Gate-Source (GND) Voltage ±30 V
Drain Current Pulsed 16 ADC
Supply Voltage 20 V
Operating Ambient Temperature -25 to +85 °C
Operating Junction Temperature Internally limited
Storage Temperature -55 to +150 °C
Detailed Product Description

 
Green Mode Fairchild Power Switch Field Effect Transistor , FSDM0465R
 
Features „

  • Internal Avalanche Rugged SenseFET „
  • Low Start-up Current (max. 40µA) „
  • Low Power Consumption; under 1W at 240VAC and 0.4W Load „
  • Precise Fixed Operating
  • Frequency (66kHz) „ Frequency Modulation for Low EMI „
  • Pulse-by-Pulse Current Limiting (Adjustable) „
  • Over-Voltage Protection (OVP) „
  • Overload Protection (OLP) „
  • Thermal Shutdown Function (TSD) „
  • Auto-Restart Mode „
  • Under-Voltage Lock Out (UVLO) with Hysteresis „
  • Built-in Soft-Start (15ms)

Applications „

  • SMPS for VCR, SVR, STB, DVD, and DVCD „
  • Adaptor „
  • SMPS for LCD Monitor

Related Application Notes „

  • AN-4137: Design Guidelines for Off-line Flyback Converters Using Fairchild Power Switch (FPS) „
  • AN-4140: Transformer Design Consideration for Off-line Flyback Converters using Fairchild Power Switch
  • „AN-4141: Troubleshooting and Design Tips for Fairchild Power Switch Flyback Applications „
  • AN-4148: Audible Noise Reduction Techniques for FPS Applications

Description
The FSCM0465R is an integrated Pulse-Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high-voltage powerswitching regulator that combines an avalanche rugged SenseFET with a current mode PWM control block. The PWM controller includes an integrated fixed-frequency oscillator, under-voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for a loop compensation, and self-protection circuitry. Compared with a discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size, and weight while simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform well suited for cost-effective designs of flyback converters.
 
Absolute Maximum Ratings
The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings.
 
TA = 25°C unless otherwise specified.

SymbolParameterValueUnit
BVDSSDrain-Source Breakdown Voltage(1)650V
VDGRDrain-Gate Voltage (RGS=1MΩ)650V
VGSGate-Source (GND) Voltage±30V
IDMDrain Current Pulsed(2)16ADC
ID

Continuous Drain Current
(TO-220-6L, I2-PAK-6L)

T C = 25°C4.0ADC
T C = 100°C2.5ADC
Continuous Drain Current (D2-PAK-6L)T C = 25°C2.3ADC
T C = 100°C1.4ADC
VCCSupply Voltage20V
VFBFeedback Voltage Range-0.3 to VCCV
PDTotal Power Dissipation (TO-220-6L)140W
Derating-1.1W/°C
PDTotal Power Dissipation (I2-PAK-6L)75W
Derating-1.5W/°C
PDTotal Power Dissipation (D2-PAK-6L)80W
Derating-0.64W/°C
TJOperating Junction TemperatureInternally limited°C
TAOperating Ambient Temperature-25 to +85°C
TSTGStorage Temperature-55 to +150°C
 ESD Capability, HBM Model (All pins except Vfb)

2.0

(GND-Vfb = 1.5kV)

(VCC-Vfb = 1.0kV)

kV
 ESD Capability, Machine Model (All pins except Vfb)

300

(GND-Vfb = 250V)

(VCC-Vfb = 100V)

V

Notes: 1. Tj = 25°C to 150°C
             2. Repetitive rating: Pulse-width limited by maximum junction temperature
             3. T C: Case back surface temperature with infinite heat sink
 
 
Typical Circuit
      Figure 1. Typical Flyback Application
 
 
Internal Block Diagram
Figure 2. Functional Block Diagram of FSCM0465R
 
 
Pin Configuration
                                          Figure 3. Pin Configuration (Top View)

























Product Tags: multi emitter transistor   silicon power transistors  
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