IRF7240TRPBF Power Mosfet Transistor high power mosfet transistors
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IRF7240PbF HEXFET Power MOSFET
Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique
Absolute Maximum Ratings
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
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Product Tags: multi emitter transistor silicon power transistors |