IRFB20N50KPBF Power Mosfet Transistor power mosfet ic

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	IRFB20N50KPBF
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	6900pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-220AB
Pulsed Drain Current	80 A
Power Dissipation	280 W
Linear Derating Factor	2.2 W/°C
Gate-to-Source Voltage	± 30 V
Peak Diode Recovery dv/dt	6.9 V/ns
Operating Junction and Storage Temperature	-55 to + 150°C

Detailed Product Description

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

IRFB20N50KPbF SMPS MOSFET

HEXFET Power MOSFET

Applications

Benefits

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	20	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	12	A
I_DM	Pulsed Drain Current	80	A
P_D @T_C = 25°C	Power Dissipation	280	W
	Linear Derating Factor	2.2	W/°C
V_GS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.9	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds (1.6mm from case )	300	°C
	Mounting Torque, 6-32 or M3 screw	10	N

Product Tags: multi emitter transistor silicon power transistors

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